نوع مقاله : مقاله پژوهشی
نویسندگان
1 دانشجوی دکترا، دانشگاه پیام نور، تهران، ایران
2 دانشگاه شیراز
3 گروه فیزیک،دانشگاه پیام نور، تهران، ایران
چکیده
کلیدواژهها
موضوعات
عنوان مقاله [English]
نویسندگان [English]
Semiconductor quantum structures are one of the advanced sources in light production, and applying impurities to them causes changes in their electronic and electro-optical properties, so investigating their properties is of particular importance. The title of a new research subject with many applications has attracted the attention of scientists and industrialists. In this study, the electronic properties of a spherical quantum dot made of gallium arsenide and two spherical quantum dots made of indium arsenide inside the gallium arsenide quantum sphere have been investigated. First Schrödinger's equation was investigated in the mentioned structures by using finite element method and effective mass approximation. The obtained results such as eigenfunctions and energy eigenvalues and other physical properties have been compared with the results obtained from previous similar works. Then, the effect of impurities on the electronic properties by using the self-consistent Poisson-Schrödinger equation, has been obtained and compared with the results of solving the Schrödinger equation in boundaries conditions. The software used in this review is Comsol. The obtained results indicate that the effect of impurity and the radii of the internal nanostructures on the electronic properties of the nanostructure are significant. As a result, by changing the mentioned parameters, it is possible to calculate the energy difference between the first excited state and the ground state. Results show that according to energy difference, it is possible to design infrared detectors with a relatively wide range.
کلیدواژهها [English]
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